SmallMOS_2D3D解析
#header
## STI depth
set sti_depth 0.15
## Half STI width
set sti_width @sti_width@
## Half gate length
set gate_len @<lg/2>@
## SD length (from center)
set sd_len [expr $gate_len+0.05]
#endheader
## X lines
line x location= 0.0 spacing= 0.001 tag= top
line x location= $sti_depth spacing= 0.020
line x location= 1.0 spacing= 0.100 tag= bot
## Y lines
line y location= 0 tag= left
line y location= 2*$sti_width tag= right
## No Z lines (structure is 2D initially)
region Silicon xlo= top xhi= bot ylo= left yhi= right
init wafer.orient= 100 field= Boron concentration= 2e15
## Recommeded in all projects
AdvancedCalibration
math coord.ucs
## Recomended for 3D projects
pdbSet Mechanics EtchDepoRelax 0
## Mesh settings
refinebox min.normal.size= 0.005 normal.growth.ratio= 1.5
refinebox add min= "0 -$sti_width -1" max= "$sti_depth $sti_width 1" xrefine= {0.002 0.010 0.020} yrefine= $sti_width/3
## Body implant
implant Boron dose= 2e13 energy= 15 tilt= 7 rotation= 22
# Etch STI
mask name= STI left= -$sti_width right= $sti_width front= -10 back= 10
deposit Nitride type= isotropic thickness= 0.100
etch Nitride type= anisotropic thickness= 0.120 mask= STI
etch Silicon type= directional thickness= $sti_depth direction= { 1.0 0.05 0.05 }
deposit Oxide type= fill coord= 0
strip Nitride
## etch oxide isotropoic thickness= 0.010
pdbSet Oxide_Silicon Boron Segregation 0.1
## Real gate oxidation (structure is still 2D)
deposit type= isotropic Oxide thickness= 0.002 selective.materials= {Silicon} temperature= 850
temp_ramp name= gox time= 20 temperature= 27 t.final= 600
temp_ramp name= gox time= 5 temperature= 600 t.final= 850
temp_ramp name= gox time= 2 temperature= 850 O2
temp_ramp name= gox time= 10 temperature= 850 t.final= 600
temp_ramp name= gox time= 20 temperature= 600 t.final= 27
diffuse temp.ramp= gox
#split @Spacer@
## Z lines.Structure becomes 3D
line z location= 0 tag= front
line z location= $sd_len+$sti_width tag= back
## Deposit poly
deposit PolySilicon type= fill coord= -0.050
## Gate etch
mask name= GATE left= -1 right= 1 front= -$gate_len back= $gate_len
etch PolySilicon type= anisotropic thickness= 0.100 mask= GATE
deposit Nitride type= isotropic thickness= 0.012
etch Nitride anisotropic thickness= 0.018
etch Oxide type= anisotropic thickness= 0.0025
refinebox add min= "0 -$sti_width -$gate_len" max= "0.020 $sti_width $gate_len" xrefine= {0.001 0.003 0.005} zrefine= {0.001 0.005 0.001}
#split @SD@
implant Arsenic energy=5 dose=1e15 tilt=0 rotation=0
temp_ramp name= r1 time= 5 temperature= 27 t.final= 600
temp_ramp name= r1 time= 0.1<s> temperature= 600 t.final= 1000
temp_ramp name= r1 time= 5<s> temperature= 1000
temp_ramp name= r1 time= 3<s> temperature= 1000 t.final= 600
temp_ramp name= r1 time= 5 temperature= 600 t.final= 27
diffuse temp.ramp= r1
#split @Contacts@
set minx -0.020
etch type= cmp coord= $minx
## transform cut up location= $minx
transform reflect back
## remeshing for device simulation
grid set.Delaunary.type= boxmethod
refinebox min= {0.0 -@sti_width@ @<-lg/2>@} max= {0.005 @sti_width@ @<lg/2>@} xrefine= {0.001 0.001 0.002}
grid remesh
contact name= gate box PolySilicon xlo=$min-0.005 xhi=$minx+0.005 ylo=@<-sti_width>@ yhi=@sti_width@ zlo=@<-lg/2.1>@ zhi=@<lg/2.1>@
contact name= source box Silicon xlo=-0.005 xhi=0.005 ylo=@<-sti_width>@ yhi=@sti_width@ zlo=@<-lg/2-0.050>@ zhi=@<-lg/2-0.030>@
contact name= drain box Silicon xlo=-0.005 xhi=0.005 ylo=@<-sti_width>@ yhi=@sti_width@ zlo=@<lg/2+0.030>@ zhi=@<lg/2+0.050>@
contact name= substrate bottom
struct tdr= n@node@
mask left right font back
mask name= STI left= -$sti_width right= $sti_width front= -10 back= 10
- mask
创建光罩，以供后续在蚀刻、沉积或光刻命令中使用 - left right front back
指定一个矩形(rectangle)的角。矩形被添加到光罩当前列表中。如果一个光罩指定多个矩形，则必须已相同的名称使用多个光罩命令。默认单位是：um
deposit Oxide type= fill coord= 0
- coord : 指定type=fill的x坐标。默认单位:um
- type=fill: 执行填充指定的材料，直到参数指定的坐标为止
pdbSet Oxide_Silicon Boron Segregation 0.1
- Segregation: 这是除氧化物-硅、氧化物-SiC和氮氧化物-硅界面处的磷外，所有界面处掺杂剂的默认边界条件.分离边界条件也称为两相分离边界条件。界面处的总掺杂剂通量是平衡的。
- 如果必须包含掺杂剂的电荷态或必须设置掺杂-缺陷对的边界条件，使用以下命令：
pdbSet <interface_material> <dopant> Surf.Recomb.Model <bulk_diffusion_model> <model>
- 对于任何掺杂剂扩散模型(dopant diffusion model)，如果表面重组模型(the surface recombination model)设置为默认，参数设置用以下命令:
pdbSet <interface material > <dopant> Transfer {<n>}
pdbSet <interface material> <dopant> Segregation {<n>}
etch type= cmp coord= $minx
etch: 移除部分或全部暴露的层
coord: type= cmp使用的x坐标，默认单位:um
type：指定要执行的蚀刻类型
type=cmp：执行CMP并与参数坐标一起使用
